A Comparison of GaN, Si and GaAs Power Amplifiers

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dc.contributor.authorKizilbey, Oguzhan
dc.contributor.authorPalamutcuogullari, Osman
dc.date.accessioned2024-03-13T10:30:19Z
dc.date.available2024-03-13T10:30:19Z
dc.date.issued2014
dc.departmentİstanbul Beykent Üniversitesien_US
dc.description22nd IEEE Signal Processing and Communications Applications Conference (SIU) -- APR 23-25, 2014 -- Karadeniz Teknik Univ, Trabzon, TURKEYen_US
dc.description.abstractPower amplifiers (PAs) are used in the wide range of electronics such as RADAR, base stations, jammers and cable TV applications. These amplifiers can achieve design specifications like high efficiency and high output power (>20W) as much as the capability of the transistor. For this reason; Si LDMOSFETs, GaN HEMTs and GaAs HFETs are advancing their place in the market. In this article; GaN, Si, and GaAs power transistor technologies will be compared and an assessment will be made about which one is leading the market by 2014.en_US
dc.description.sponsorshipIEEE,Karadeniz Tech Univ, Dept Comp Engn & Elect & Elect Engnen_US
dc.identifier.endpage528en_US
dc.identifier.isbn978-1-4799-4874-1
dc.identifier.issn2165-0608
dc.identifier.startpage526en_US
dc.identifier.urihttps://hdl.handle.net/20.500.12662/3270
dc.identifier.wosWOS:000356351400110
dc.identifier.wosqualityN/Aen_US
dc.indekslendigikaynakWeb of Science
dc.language.isotren_US
dc.publisherIEEEen_US
dc.relation.ispartof2014 22nd Signal Processing And Communications Applications Conference (Siu)en_US
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectPower amplifieren_US
dc.subjectGaNen_US
dc.subjectGaAsen_US
dc.subjectSien_US
dc.titleA Comparison of GaN, Si and GaAs Power Amplifiersen_US
dc.typeConference Objecten_US

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