A Comparison of GaN, Si and GaAs Power Amplifiers
Küçük Resim Yok
Tarih
2014
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
IEEE
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
Power amplifiers (PAs) are used in the wide range of electronics such as RADAR, base stations, jammers and cable TV applications. These amplifiers can achieve design specifications like high efficiency and high output power (>20W) as much as the capability of the transistor. For this reason; Si LDMOSFETs, GaN HEMTs and GaAs HFETs are advancing their place in the market. In this article; GaN, Si, and GaAs power transistor technologies will be compared and an assessment will be made about which one is leading the market by 2014.
Açıklama
22nd IEEE Signal Processing and Communications Applications Conference (SIU) -- APR 23-25, 2014 -- Karadeniz Teknik Univ, Trabzon, TURKEY
Anahtar Kelimeler
Power amplifier, GaN, GaAs, Si
Kaynak
2014 22nd Signal Processing And Communications Applications Conference (Siu)
WoS Q Değeri
N/A
