High Efficiency Wideband Power Amplifier with Class-J Configuration

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dc.contributor.authorCagdas, Engin
dc.contributor.authorKizilbey, Oguzhan
dc.contributor.authorYazgi, Metin
dc.contributor.authorPalamutcuogullari, Osman
dc.contributor.authorYarman, B. Siddik
dc.date.accessioned2024-03-13T10:30:19Z
dc.date.available2024-03-13T10:30:19Z
dc.date.issued2018
dc.departmentİstanbul Beykent Üniversitesien_US
dc.description18th Mediterranean Microwave Symposium (MMS) -- OCT 31-NOV 02, 2018 -- Istanbul, TURKEYen_US
dc.description.abstractThe design and implementation of a high efficiency Class-J mode RF power amplifier (PA) for wireless communications applications is described here. In this study, a broadband class-J power amplifier with GaN HEMT transistor is designed to achieve 40 dBm output power and 10 dB gain, high efficiency and linearity performance in the 2.5-3.5 GHz frequency band. Experimental results indicate good agreement with simulations verifying and demonstrating the class-J mode operation. The obtained power added efficiency (PAE) is above 68% and the output power is 39.84 dBm at an input drive of 30 dBm. High efficiency is achieved in the frequency range from 2.5 GHz to 3.5 GHz. Simulation and experimental results show that the class-J RF power amplifier can be realized more effectively in terms of a better compromise between power and efficiency trade-offs over a significant RF bandwidth than conventional class-AB/B operations. the ACPR value for the linearity measurement was found to be around -30 dBc.en_US
dc.identifier.endpage397en_US
dc.identifier.isbn978-1-5386-7132-0
dc.identifier.issn2157-9822
dc.identifier.scopus2-s2.0-85061799465en_US
dc.identifier.scopusqualityN/Aen_US
dc.identifier.startpage394en_US
dc.identifier.urihttps://hdl.handle.net/20.500.12662/3266
dc.identifier.wosWOS:000458427500106en_US
dc.identifier.wosqualityN/Aen_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherIEEEen_US
dc.relation.ispartof2018 18th Mediterranean Microwave Symposium (Mms)en_US
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectGaN (HEMT)en_US
dc.subjectClass-Jen_US
dc.subjecthigh efficiency power amplifieren_US
dc.subjectbroadband power amplifieren_US
dc.titleHigh Efficiency Wideband Power Amplifier with Class-J Configurationen_US
dc.typeConference Objecten_US

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