A comparison of GaN, Si and GaAs power amplifiers [GaN, Si ve GaAs transistörlü güç kuvvetlendiricilerinin karşilaştirilmasi]

dc.contributor.authorKizilbey O.
dc.contributor.authorPalamutcuogullari O.
dc.date.accessioned2024-03-13T10:00:54Z
dc.date.available2024-03-13T10:00:54Z
dc.date.issued2014
dc.departmentİstanbul Beykent Üniversitesien_US
dc.description2014 22nd Signal Processing and Communications Applications Conference, SIU 2014 -- 23 April 2014 through 25 April 2014 -- Trabzon -- 106053en_US
dc.description.abstractPower amplifiers (PAs) are used in the wide range of electronics such as RADAR, base stations, jammers and cable TV applications. These amplifiers can achieve design specifications like high efficiency and high output power (>20W) as much as the capability of the transistor. For this reason; Si LDMOSFETs, GaN HEMTs and GaAs HFETs are advancing their place in the market. In this article; GaN, Si, and GaAs power transistor technologies will be compared and an assessment will be made about which one is leading the market by 2014. © 2014 IEEE.en_US
dc.identifier.doi10.1109/SIU.2014.6830281
dc.identifier.endpage528en_US
dc.identifier.isbn9781479948741
dc.identifier.scopus2-s2.0-84903752509en_US
dc.identifier.scopusqualityN/Aen_US
dc.identifier.startpage526en_US
dc.identifier.urihttps://doi.org/10.1109/SIU.2014.6830281
dc.identifier.urihttps://hdl.handle.net/20.500.12662/2838
dc.indekslendigikaynakScopusen_US
dc.language.isotren_US
dc.publisherIEEE Computer Societyen_US
dc.relation.ispartof2014 22nd Signal Processing and Communications Applications Conference, SIU 2014 - Proceedingsen_US
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectGaAsen_US
dc.subjectGaNen_US
dc.subjectPower amplifieren_US
dc.subjectSien_US
dc.titleA comparison of GaN, Si and GaAs power amplifiers [GaN, Si ve GaAs transistörlü güç kuvvetlendiricilerinin karşilaştirilmasi]en_US
dc.typeConference Objecten_US

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