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    A 2.7-2.9 GHz Class-F Power Amplifier with 50W Output Power, %75 Efficiency and Low Harmonic Content
    (IEEE, 2019) Bozdemir, Suheyb; Kizilbey, Oguzhan; Yazgi, Metin; Palamutcuogullari, Osman; Yarman, Bekir Siddik Binboga
    In this paper, a 2.7-2.9 GHz class-F power amplifier with 50-Watt output power, 75% power added efficiency (PAE), 12 dB gain and low harmonic content was designed and simulated by using CGHV40050F Gallium Nitride high electron mobility transistor (GaN HEMT) and NI AWR Microwave Office v14. Realizations are planned to be made on Rogers RT5880 dielectric material which has 0.508 mm thickness and 2.20 dielectric constant.
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    Design of 50-Watt 2-Stage Class-F Power Amplifier for Medical Applications
    (IEEE, 2020) Bozdemir, Suheyb; Kizilbey, Oguzhan; Yazgi, Metin; Palamutcuogullari, Osman; Yarman, Siddik
    In this work, a high power high efficiency and high gain class-F power amplifier with low harmonic content was designed and simulated by using CGH40010F and CGHV40050F Gallium Nitride transistors and NI AWR Microwave Office for electromedical and radar applications. According to the simulation results, 47.5 dBm output power, 73% efficiency and 22 dB gain values were obtained in the 2.7-2.9 frequency band.
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    High Efficiency Wideband Power Amplifier with Class-J Configuration
    (IEEE, 2018) Cagdas, Engin; Kizilbey, Oguzhan; Yazgi, Metin; Palamutcuogullari, Osman; Yarman, B. Siddik
    The design and implementation of a high efficiency Class-J mode RF power amplifier (PA) for wireless communications applications is described here. In this study, a broadband class-J power amplifier with GaN HEMT transistor is designed to achieve 40 dBm output power and 10 dB gain, high efficiency and linearity performance in the 2.5-3.5 GHz frequency band. Experimental results indicate good agreement with simulations verifying and demonstrating the class-J mode operation. The obtained power added efficiency (PAE) is above 68% and the output power is 39.84 dBm at an input drive of 30 dBm. High efficiency is achieved in the frequency range from 2.5 GHz to 3.5 GHz. Simulation and experimental results show that the class-J RF power amplifier can be realized more effectively in terms of a better compromise between power and efficiency trade-offs over a significant RF bandwidth than conventional class-AB/B operations. the ACPR value for the linearity measurement was found to be around -30 dBc.