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Öğe Current mode MOSFET-only third order Butterworth low pass filter with DTMOS tuning technique(Springer, 2016) Uygur, Atilla; Metin, Bilgin; Kuntman, Hakan; Cicekoglu, OguzhanA new low-voltage, MOSFET-only, third order low-pass filter is proposed. The circuit employs only MOSFETs operating in saturation region. The transconductance gains and the parasitic gate to source capacitances of the MOSFETs represent resistive and capacitive elements of the filter. Using TSMC 0.18 mu m technology parameters the circuit is simulated, non-ideal effects have been investigated and dynamic threshold voltage MOS tuning technique has been developed for the filter circuit to suppress the non-idealities. In this tuning technique, bulk terminals of MOS transistors are used to adjust the biasing point of the circuit by changing the threshold voltages of the MOS transistors. This gives the designers more flexibility than conventional tuning methods and allows low voltage operation when several transistors are stacked over each other. The resulting circuit is capable of operation at high frequencies with low power consumption due to the usage of significantly less number of transistors than conventional active block-based filtering circuits.Öğe MOS-Only Third Order Butterworth Filter with DTMOS Tuning Technique for High Frequency Applications(IEEE, 2015) Uygur, Atilla; Meting, Bilgin; Cicekoglu, Oguzhan; Kuntman, HakanIn this paper, a new low-voltage, MOS-only, third order low-pass filter is proposed. The core circuit consists of only three MOSFETs and their parasitic gate to source capacitances as passive elements. Using TSMC 0.18 mu m technology parameters, the circuit with all biasing elements included consumes just 0.69mW for a cut-off frequency higher than 200MHz under a single supply of 1.8V. Non-ideal effects have been investigated and dynamic threshold voltage MOS (DTMOS) tuning technique has been developed for the filter circuit to suppress the non-idealities. Resulting circuit is capable of operation at high frequencies with low power consumption due to the usage of significantly less number of transistors than conventional active block-based filtering circuits.Öğe An Ultra Low-Voltage Ultra Low-Power Memristor(IEEE, 2015) Yener, Suayb Cagri; Uygur, Atilla; Kuntman, H. HakanMemristor can provide new approaches especially in nonlinear & chaotic circuit design. Since no commercially available memristor exist until yet, obtaining of a practical implementation which behaves as a memristor, is very important from the point of view real-world circuit design. In this work, an ultra low-voltage ultra low-power DTMOS-based design of memristor is presented. A new ultra low-voltage, ultra low-power operational amplifier and a new ultra low-voltage, ultra low-power multiplier are also proposed to use in the realization. Our design is composed of these two type active blocks using CMOS 0.18 mu m process technology with symmetric +/- 0.25V supply voltages. Characteristics and performance of our design is verified by PSPICE simulations. Total power consumption of the proposed memristor is found as just 4.3 mu W which is suitable for ultra low-power consumption. The simulation results show that our design provides the characteristics of memristor accurately and it could be a viable and convenient option especially in low-voltage low-power memristor based chaotic applications.