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    Current mode MOSFET-only third order Butterworth low pass filter with DTMOS tuning technique
    (Springer, 2016) Uygur, Atilla; Metin, Bilgin; Kuntman, Hakan; Cicekoglu, Oguzhan
    A new low-voltage, MOSFET-only, third order low-pass filter is proposed. The circuit employs only MOSFETs operating in saturation region. The transconductance gains and the parasitic gate to source capacitances of the MOSFETs represent resistive and capacitive elements of the filter. Using TSMC 0.18 mu m technology parameters the circuit is simulated, non-ideal effects have been investigated and dynamic threshold voltage MOS tuning technique has been developed for the filter circuit to suppress the non-idealities. In this tuning technique, bulk terminals of MOS transistors are used to adjust the biasing point of the circuit by changing the threshold voltages of the MOS transistors. This gives the designers more flexibility than conventional tuning methods and allows low voltage operation when several transistors are stacked over each other. The resulting circuit is capable of operation at high frequencies with low power consumption due to the usage of significantly less number of transistors than conventional active block-based filtering circuits.
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    High Performance Wideband CMOS CCI and its Application in Inductance Simulator Design
    (Univ Suceava, Fac Electrical Eng, 2012) Arslan, Emre; Metin, Bilgin; Herencsar, Norbert; Koton, Jaroslav; Morgul, Avni; Cicekoglu, Oguzhan
    In this paper, a new, differential pair based, low-voltage, high performance and wideband CMOS first generation current conveyor (CCI) is proposed. The proposed CCI has high voltage swings on ports X and Y and very low equivalent impedance on port X due to super source follower configuration. It also has high voltage swings (close to supply voltages) on input and output ports and wideband current and voltage transfer ratios. Furthermore, two novel grounded inductance simulator circuits are proposed as application examples. Using HSpice, it is shown that the simulation results of the proposed CCI and also of the presented inductance simulators are in very good agreement with the expected ones.
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    High-performance CMOS CCI in a 0.35 ?m CMOS technology and a new all-pass filter application
    (Tubitak Scientific & Technological Research Council Turkey, 2013) Arslan, Emre; Metin, Bilgin; Cicekoglu, Mehmet Oguzhan; Morgul, Avni
    A differential pair-based, high-performance, first-generation current conveyor is proposed. The proposed circuit is laid out using the Mentor Graphics IC Station layout editor. The performance characteristics have been determined from HSpice postlayout simulations using the Austria Mikro Systeme 0.35 mu m, 3.3 V process parameters. During the simulations, +/- 1.65 V supply voltages and a 25 mu A biasing current are used. The power consumption is about 1.12 mW. The circuit also has very high voltage swings on ports X and Y, a very small impedance value on port X, high impedance values on ports Y and Z, and high-valued current and voltage transfer bandwidths. It is shown that the presented circuit can satisfy both the low-voltage/low-power and high-frequency performance current conveyor needs of the analog circuit applications. Furthermore, 2 new all-pass filter circuits as application examples are given and a procedure that can be used to search for the opportunities that would result from the use of the modified current conveyors is presented. Some special circuit topologies and new circuit function possibilities can be obtained by redesigning circuits with modified current conveyors, which is not possible with a standard current conveyor. The proposed approach is expected to allow deeper insight into circuit synthesis using modified current conveyors.