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Öğe A 2.7-2.9 GHz Class-F Power Amplifier with 50W Output Power, %75 Efficiency and Low Harmonic Content(IEEE, 2019) Bozdemir, Suheyb; Kizilbey, Oguzhan; Yazgi, Metin; Palamutcuogullari, Osman; Yarman, Bekir Siddik BinbogaIn this paper, a 2.7-2.9 GHz class-F power amplifier with 50-Watt output power, 75% power added efficiency (PAE), 12 dB gain and low harmonic content was designed and simulated by using CGHV40050F Gallium Nitride high electron mobility transistor (GaN HEMT) and NI AWR Microwave Office v14. Realizations are planned to be made on Rogers RT5880 dielectric material which has 0.508 mm thickness and 2.20 dielectric constant.Öğe Design of 50-Watt 2-Stage Class-F Power Amplifier for Medical Applications(IEEE, 2020) Bozdemir, Suheyb; Kizilbey, Oguzhan; Yazgi, Metin; Palamutcuogullari, Osman; Yarman, SiddikIn this work, a high power high efficiency and high gain class-F power amplifier with low harmonic content was designed and simulated by using CGH40010F and CGHV40050F Gallium Nitride transistors and NI AWR Microwave Office for electromedical and radar applications. According to the simulation results, 47.5 dBm output power, 73% efficiency and 22 dB gain values were obtained in the 2.7-2.9 frequency band.