A comparison of GaN, Si and GaAs power amplifiers [GaN, Si ve GaAs transistörlü güç kuvvetlendiricilerinin karşilaştirilmasi]

Kizilbey O.Palamutcuogullari O.2024-03-132024-03-1320149781479948741https://doi.org/10.1109/SIU.2014.6830281https://hdl.handle.net/20.500.12662/28382014 22nd Signal Processing and Communications Applications Conference, SIU 2014 -- 23 April 2014 through 25 April 2014 -- Trabzon -- 106053Power amplifiers (PAs) are used in the wide range of electronics such as RADAR, base stations, jammers and cable TV applications. These amplifiers can achieve design specifications like high efficiency and high output power (>20W) as much as the capability of the transistor. For this reason; Si LDMOSFETs, GaN HEMTs and GaAs HFETs are advancing their place in the market. In this article; GaN, Si, and GaAs power transistor technologies will be compared and an assessment will be made about which one is leading the market by 2014. © 2014 IEEE.trinfo:eu-repo/semantics/closedAccessGaAsGaNPower amplifierSiA comparison of GaN, Si and GaAs power amplifiers [GaN, Si ve GaAs transistörlü güç kuvvetlendiricilerinin karşilaştirilmasi]Conference Object10.1109/SIU.2014.68302812-s2.0-84903752509528N/A526