Bozdemir, SuheybKizilbey, OguzhanYazgi, MetinPalamutcuogullari, OsmanYarman, Bekir Siddik Binboga2024-03-132024-03-132019https://doi.org/10.23919/eleco47770.2019.8990654https://hdl.handle.net/20.500.12662/325011th International Conference on Electrical and Electronics Engineering (ELECO) -- NOV 28-30, 2019 -- Bursa, TURKEYIn this paper, a 2.7-2.9 GHz class-F power amplifier with 50-Watt output power, 75% power added efficiency (PAE), 12 dB gain and low harmonic content was designed and simulated by using CGHV40050F Gallium Nitride high electron mobility transistor (GaN HEMT) and NI AWR Microwave Office v14. Realizations are planned to be made on Rogers RT5880 dielectric material which has 0.508 mm thickness and 2.20 dielectric constant.eninfo:eu-repo/semantics/closedAccessConference Object10.23919/eleco47770.2019.89906542-s2.0-850809172061091N/A1088WOS:000552654100217N/A